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BST72A
N-channel enhancement mode field-effect transistor
Rev. 03 -- 25 July 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BST72A in SOT54 (TO-92 variant).
2. Features
s TrenchMOSTM technology s Very fast switching s Logic level compatible.
3. Applications
s Relay driver s High speed line driver s Logic level translator.
c c
4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT54, simplified outline and symbol Description source (s) gate (g) drain (d)
g
03ab40
Simplified outline
Symbol
d
3 21
s
03ab30
SOT54 (TO-92 variant)
N-channel MOSFET
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 C Tamb = 25 C; VGS = 5 V Tamb = 25 C VGS = 5 V; ID = 150 mA Typ - - - - 5 Max 100 190 0.83 150 10 Unit V mA W C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tamb = 25 C; VGS = 5 V; Figure 2 and 3 Tamb = 100 C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) peak source (diode forward) current Tamb = 25 C Tamb = 25 C; pulsed; tp 10 s Tamb = 25 C; pulsed; tp 10 s; Figure 3 Tamb = 25 C; Figure 1 Conditions Tj = 25 to 150 C Tj = 25 to 150 C; RGS = 20 k Min - - - - - - - -65 -65 - - Max 100 100 20 190 120 0.8 0.83 +150 +150 190 0.8 Unit V V V mA mA A W C C mA A
Source-drain diode
9397 750 07296
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
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Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
120
03aa11
03aa19
120
I
Pder 100 (%) 80
der 100 (%)
80
60
60
40
40
20
20
0 0 25 50 75 100 125 150 175 o Tamb ( C)
0 0 25 50 75 100 125 150 175 o Tamb ( C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 5 V ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of ambient temperature.
1 ID (A) RDSon = VDS/ ID
Fig 2. Normalized continuous drain current as a function of ambient temperature.
03aa62
tp = 10 s 100 s 1 ms 10 ms 100 ms D.C.
10-1
10-2
P
=
tp T
tp T
t
Ta = 25oC 10 102 103
10-3 1 VDS (V)
Tamb = 25 C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07296
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
3 of 13
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions vertical in still air; lead length 5 mm; Figure 4 Value 150 Unit K/W
7.1 Transient thermal impedance
103 Zth(j-a) (K/W) 102 = 0.5 0.2 0.1 0.05 0.02 1 single pulse
P tp T
03aa59
10
=
tp T
t
10-1 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) 102
Vertical in still air.
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration.
9397 750 07296
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
4 of 13
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 10 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain-source leakage current VDS = 60 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 5 V; ID = 150 mA; Figure 7 and 8 Tj = 25 C Tj = 150 C Dynamic characteristics gfs Ciss Coss Crss ton toff forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time VDD = 50 V; RD = 250 ; VGS = 10 V; RG = 50 ; RGS = 50 IS = 300 mA; VGS = 0 V; Figure 13 IS = 300 mA; dIS/dt = -100 A/s; VGS = 0 V; VDS = 25 V VDS = 5 V; ID = 175 mA; Figure 11 VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 12 - - - - - - 350 25 8.5 5 3 12 - 40 15 10 10 15 mS pF pF pF ns ns - - 5 - 10 23 - - - 0.01 - 10 1.0 10 100 A A nA 1 0.6 - 2 - - - - 3.5 V V V 100 89 130 - - - V V Min Typ Max Unit Static characteristics
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge - - - 0.95 30 30 1.5 - - V ns nC
9397 750 07296
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
5 of 13
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
03aa63
03aa65
0.5 ID (A) 0.45 0.4 0.35 0.3 0.25 0.2
0.7 Tj = 25oC VGS = 10V 5V ID (A) 0.6 0.5 0.4 0.3 3.5 V 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS (V) 2 0 1 2 3 4 5 6 7 VGS (V) 8 Tj = 25oC 150oC VDS > ID X RDSon
4V
0.15 0.1 0.05 0 3V
Tj = 25 C
Tj = 25 C and 150 C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
03aa64
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
03aa29
12 RDSon 11 () 10 9 8 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 3V 3.5V
Tj = 25oC
3 a 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -60 -20 20 60 100 140 180 Tj (oC)
4V
5V
VGS = 10V
0.4 ID (A)
0.5
Tj = 25 C
R DSon a = --------------------------R DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 07296
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
6 of 13
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
3
VGS(th) (V) 2.5 typ
03aa34
10-1 I D
(A) 10-2
03aa37
2
10-3
min
typ
1.5
min
10-4
1
10-5
0.5
0 -60 -20 20 60 100 140 180 Tj (oC)
10-6
0 0.5 1 1.5 2 2.5 3 VGS (V)
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature.
03aa66
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
03aa68
0.5 gfs 0.45 (S) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0
102 VDS > ID X RDSon Tj = 25oC Ciss, Coss, Crss (pF)
Ciss
150oC
10
Coss
Crss 0.1 0.2 0.3 0.4 0.5 0.6 ID (A) 0.7 1 10-1 1 10 VDS (V) 102
Tj = 25 C and 150 C; VDS > ID x RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 07296
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
7 of 13
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
03aa67
1 IS (A) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
VGS = 0 V
150oC
Tj = 25oC
0.2
0.4
0.6
0.8
1
1.2 VSD (V)
1.4
Tj = 25 C and 150 C; VGS = 0 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 07296
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
8 of 13
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
9. Package outline
Plastic single-ended leaded (through hole) package; 3 leads SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
Fig 14. SOT54 (TO-92 variant).
9397 750 07296 (c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
9 of 13
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: 03 02 01 Revision history CPCN HZG330 Description Product specification; third version; supersedes BST72A_CNV_2 of 970623. Converted from VDMOS (Nijmegen) to TrenchMOSTM (Hazel Grove) technology. 19970623 19901031 Product specification; second version. Product specification; initial version.
Rev Date 20000725
9397 750 07296
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
10 of 13
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
11. Data sheet status
Datasheet status Objective specification Preliminary specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Product specification
Production
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
9397 750 07296
(c) Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
11 of 13
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
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(SCA70)
9397 750 07296
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 -- 25 July 2000
12 of 13
Philips Semiconductors
BST72A
N-channel enhancement mode field-effect transistor
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
(c) Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 July 2000 Document order number: 9397 750 07296

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